Chemical mechanical polishing of tantalum: oxidizer and pH effectsDU, T; TAMBOLI, D; DESAI, V et al.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 2, pp 87-90, issn 0957-4522, 4 p.Article

Planarizing ars for dual damascene processingPAVELCHEK, Edward K; CERNIGLIARO, Marjorie; TREFONAS, Peter et al.SPIE proceedings series. 2001, pp 864-872, isbn 0-8194-4031-0, 2VolConference Paper

Mathematical modeling of polish-rate decay in chemical-mechanical polishingBORUCKI, L.Journal of engineering mathematics. 2002, Vol 43, Num 2-4, pp 105-114, issn 0022-0833Article

Arrhenius characterization of ILD and copper CMP processesSOROOSHIAN, J; DENARDIS, D; CHARNS, L et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 2, pp G85-G88, issn 0013-4651Article

Estimation of fractional surface coverage of particles for oxide CMPCHOI, Wonseop; LEE, Seung-Mahn; ABIADE, Jeremiah et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp G368-G372, issn 0013-4651Article

Hard-pad-based CMP of premetal dielectric planarizationKIM, Sam-Dong; HWANG, In-Seok; CHOI, Ki-Sik et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 8, pp G450-G455, issn 0013-4651Article

Study of pattern density effects in CMP using fixed abrasive padsGORANTLA, Venkata R; VENIGALLA, Rajasekhar; ECONOMIKOS, Laertis et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 12, pp G821-G825, issn 0013-4651Article

Integrated multiscale process simulation of damascene structuresBLOOMFIELD, M. O; YEON HO IM; SEOK, Jongwon et al.Proceedings - Electrochemical Society. 2003, pp 455-466, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Development of aluminum chemical mechanical planarizationRONAY, Maria.Journal of the Electrochemical Society. 2001, Vol 148, Num 9, pp G494-G499, issn 0013-4651Article

A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishingPING HSUN CHEN; BING WEI HUANG; SHIH, Han-C et al.Thin solid films. 2005, Vol 476, Num 1, pp 130-136, issn 0040-6090, 7 p.Article

An engineering approach to predict the polishing rate in CMP with rotational equipmentPING HSUN CHEN; SHIN, Han-C; BING WEI HUANG et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp G649-G651, issn 0013-4651Article

Charakterisierung von Poliersuspensionen für das chemisch-mechanische Polieren (CMP) von Waferoberflächen in der Halbleiterindustrie = Characterization of polishing slurries for the chemical mechanical polishing (CMP) of wafer surfaces in the semiconductor industryKUNTZSCH, Timo; WITNIK, Ulrike; STINTZ, Michael et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 2003, Vol 52, Num 4, pp 108-112, issn 0043-6925, 5 p.Article

Characterization and modeling of oxide chemical-mechanical polishing using planarization length and pattern density conceptsOUMA, D. Okumu; BONING, Duane S; CHUNG, James E et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 232-244, issn 0894-6507Article

Surfactant behavior and study in slurryLIN, Bih-Tiao; CHEN, C. S; YEH, W. K et al.ASMC proceedings. 2002, pp 362-367, issn 1078-8743, isbn 0-7803-7158-5, 6 p.Conference Paper

Empirical modeling of oxide CMP at chip scaleWOLF, H; STREITER, R; RZEHAK, R et al.Microelectronic engineering. 2005, Vol 82, Num 3-4, pp 686-694, issn 0167-9317, 9 p.Conference Paper

Tribological issues and modeling of removal rate of low-k films in CMPTHAGELLA, Swetha; SIKDER, Arun K; KUMAR, Ashok et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 3, pp G205-G215, issn 0013-4651Article

90nm node damascene copper stress voiding model and lifetime extrapolation methodologyFEDERSPIEL, X; GRAIN, S.International Integrated Reliability Workshop. 2004, pp 64-70, isbn 0-7803-8517-9, 1Vol, 7 p.Conference Paper

Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration schemeNITTA, S; PURUSHOTHAMAN, S; LINIGER, E et al.International Electron Devices Meeting. 2004, pp 321-324, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Optimization of CMP from the viewpoint of consumable effectsJIANFENG LUO; DORNFELD, David A.Journal of the Electrochemical Society. 2003, Vol 150, Num 12, pp G807-G815, issn 0013-4651Article

Advanced front end of the line clean for post CMP processesKASHKOUSH, Ismall; NOLAN, Thomas; NEMETH, Dennis et al.Proceedings - Electrochemical Society. 2003, pp 299-304, issn 0161-6374, isbn 1-56677-411-X, 6 p.Conference Paper

Effects of deionized water pressure and purified nitrogen gas on the chemical mechanical polishing processKIM, Sang-Yong; JEONG, So-Young; SEO, Yong-Jin et al.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 5, pp 299-302, issn 0957-4522Article

Challenge of ashing and cleaning on SiOC-H dielectric: characterization and main issuesLOUVEAU, O; LOUIS, D; ASSOUS, M et al.Microelectronic engineering. 2002, Vol 61-62, pp 867-874, issn 0167-9317Conference Paper

Analyse du comportement d'interconnexions damascènes en cuivre testées en électromigration = Behaviour analysis of copper damascene interconnects submitted to electromigration stressesBerger, Thierry; Lormand, Gerard.2001, 222 p.Thesis

Effect of mechanical properties of PVA brush rollers on frictional forces during post-CMP scrubbingPHILIPOSSIAN, Ara; MUSTAPHA, Lateef.Journal of the Electrochemical Society. 2004, Vol 151, Num 9, pp G632-G637, issn 0013-4651Article

Method for measuring feature-scale planarization in copper chemical mechanical polishing processingLAURSEN, T; RUNNELS, S. R; BASAK, S et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 4, pp G279-G283, issn 0013-4651Article